8050 (1.5a) npn silicon epitaxial planar transistor for switching and amplifier applications. especially suitable for af-driver stages and low power output stages. on special request, thes e transistors can be manufactured in different pin configurations. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 25 v emitter base voltage v ebo 6 v collector current i c 1.5 a power dissipation p tot 1 w junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 1 v, i c = 5 ma at v ce = 1 v, i c = 100 ma at v ce = 1 v, i c = 800 ma 8050c 8050d h fe h fe h fe h fe 45 120 160 40 - - - - - 200 300 - - - - - collector cutoff current at v cb = 35 v i cbo - - 100 na emitter cutoff current at v be = 6 v i ebo - - 100 na collector base breakdown voltage at i c = 100 a v (br)cbo 40 - - v collector emitter breakdown voltage at i c = 2 ma v (br)ceo 25 - - v emitter base breakdown voltage at i e = 100 a v (br)ebo 6 - - v collector emitter saturation voltage at i c = 800 ma, i b = 80 ma v ce(sat) - - 0.5 v base emitter saturation voltage at i c = 800 ma, i b = 80 ma v be(sat) - - 1.2 v base emitter voltage at i c = 10 ma, v ce = 1 v v be - - 1 v gain bandwidth product at v ce = 10 v, i c = 50 ma f t 120 - - mhz collector base capacitance at v cb = 10 v, f = 1 mhz c ob - 15 - pf 1.emitter 2.base 3.collector to-92 plastic package weight approx. 019g
8050 (1.5a)
|
